1. Tong Yu. Simulation and optimization of metal gate CMOS process and circuit by TCAD. J. Phys.: Conf. Ser. 2023;2634(1):012011. https://doi.org/ 10.1088/1742-6596/2634/1/012011
2. Huet K., Aubin J., Raynal P.-E., Curvers B., Verstraete A., Lespinasse B. et al. Pulsed laser annealing for advanced technology nodes: Modeling and calibration. Appl. Surf. Sci. 2020;505:144470. https://doi.org/10.1016/j.apsusc.2019.144470
3. Ma X., Huang Y., Tang X., Luo Y., Shen H., Xiao F. Numerical modeling of FS-trench IGBTs by TCAD and its parameter extraction method. Microelectron. Reliab. 2023;147:115053. https://doi.org/10.1016/j.microrel.2023.115053
4. Groppo E., Gossner H., Brederlow R. TCAD modeling of ESD diode overshoot during ultrafast TLP events. IEEE Electron Device Lett. 2025;46(3):468–471. https://doi.org/10.1109/led.2025.3531797
5. Wong H. Yu., Fossito Tenkeu A. C. Advanced TCAD simulation and calibration of gallium oxide vertical transistor. ECS J. Solid State Sci. Technol. 2020;9(3):035003. https://doi.org/10.1149/2162-8777/ab7673
6. Miccoli C., Iucolano F. Study of oxide trapping in SiC MOSFETs by means of TCAD simulations. Mater. Sci. Semicond. Process. 2019;97:40–43. https://doi.org/10.1016/j.mssp.2019.02.035
7. Silvestri L., Palsgaard M., Rhyner R., Frey M., Wellendorff J., Smidstrup S. et al. Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs. Solid-State Electron. 2023;200:108533. https://doi.org/10.1016/j.sse.2022.108533
8. Ding Q., Kuhlmann A. V., Fuhrer A., Schenk A. A generalizable TCAD framework for silicon FinFET spin qubit devices with electrical control. Solid-State Electron. 2023;200:108550. https://doi.org/10.1016/j.sse.2022.108550
9. Lomonaco J., Rostand N., Martinie S., Bournel A. TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic. Solid-State Electron. 2024;211:108813. https://doi.org/10.1016/j.sse.2023.108813
10. Fan G., Ma T., Sun X., Shao L., Low K. L. Graph attention network-based unified TCAD modeling enabling fast design technology co-optimization through transfer learning. IEEE Trans. Electron Devices. 2025;72(1):474–481. https://doi.org/10.1109/ted.2024.3493854
11. Petrosyants K. O., Silkin D. S., Popov D. A., Ismail-Zade M. R., Kharitonov I. A., Pereverzev L. E. et al. Features of TCAD and SPICE simulation of a charged particle impact into a 6T SRAM cell manufactured using the CMOS 28-nm technology node. Russ. Microelectron. 2024;53(7):737–743. https://doi.org/10.1134/S1063739724700823
12. Петросянц К. О., Исмаил-Заде М. Р., Кожухов М. В., Попов Д. А., Пугачёв А. А., Самбурский Л. М. и др. Подсистема TCAD- и SPICE-моделирования элементов кремниевых БИС с учетом влияния температуры, радиации и старения. Наноиндустрия. 2022;15(S8-1(113)):183–194. https://doi.org/10.22184/1993-8578.2022.15.8s.183.194. EDN: SUZPKY.
Petrosyants K. O., Ismail-Zade M. R., Kozhukhov M. V., Popov D. A., Pugachev A. A., Sambursky L. M. et al. TCAD and SPICE subsystem for modeling silicon VLSI elements in view of temperature, radiation and aging effects. Nanoindustriya = Nanoindustry. 2022;15(S8-1(113)):183–194. (In Russ.). https://doi.org/10.22184/1993-8578.2022.15.8s.183.194
13. Чаплыгин Ю. А., Артамонова Е. А., Красюков А. Ю. Зависимость теплового сопротивления мощного МОП-транзистора на подложке кремний-на-изоляторе от конструктивно-технологических параметров его структуры. Изв. вузов. Электроника. 2011;(5):44–47. EDN: OHKFXP.
Chaplygin Yu. A., Artamonova E. A., Krasyukov A. Yu. Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on the construction-technological parameters of its structure. Russ. Microelectron. 2012;41(7):376–378. https://doi.org/10.1134/S1063739712070049
14. Козлов A. В., Красюков А. Ю., Крупкина Т. Ю., Чаплыгин Ю. А. Моделирование характеристик и оптимизация конструктивно-технологических параметров интегральных магниточувствительных элементов в составе микро- и наносистем. Изв. вузов. Электроника. 2015;20(5):489–496. EDN: UNSUQR.
Kozlov A. V., Krasjukov A. Yu., Krupkina T. Yu., Chaplygin Yu. A. Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems. Russ. Microelectron. 2016;45(7):522–527. https://doi.org/10.1134/S1063739716070088